RBS/Channeling Studies of Swift Heavy Ion Irradiated GaN Layers

Journal Article · Tue Mar 10 00:00:00 EDT 2009 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3120057· OSTI ID:21289556

Sathish, N; Dhamodaran, S; Pathak, A P ^[1]; Muntele, C; Ila, D ^[2]; Khan, S A; Avasthi, D K ^[3]

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1. School of Physics, University of Hyderabad, Hyderabad 500 046 (India)
2. Center for Irradiation of Materials, Dept. of Physics, Alabama A and M University, Normal, AL 35762 (United States)
3. Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India)

Epitaxial GaN layers grown by MOCVD on c-plane sapphire substrates were irradiated with 150 MeV Ag ions at a fluence of 5x10{sup 12} ions/cm{sup 2}. Samples used in this study are 2 {mu}m thick GaN layers, with and without a thin AlN cap-layer. Energy dependent RBS/Channeling measurements have been carried out on both irradiated and unirradiated samples for defects characterization. Observed results are compared and correlated with previous HRXRD, AFM and optical studies. The {chi}{sub min} values for unirradiated samples show very high value and the calculated defect densities are of the order of 10{sup 10} cm{sup -2} as expected in these samples. Effects of irradiation on these samples are different as initial samples had different defect densities. Epitaxial reconstruction of GaN buffer layer has been attributed to the observed changes, which are generally grown to reduce the strain between GaN and Sapphire.

• OSTI ID: 21289556
• Journal Information: AIP Conference Proceedings, Vol. 1099, Issue 1; Conference: CAARI 2008: 12. international conference on application of accelerators in research and industry, Fort Worth, TX (United States), 10-15 Aug 2008; Other Information: DOI: 10.1063/1.3120057; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM NITRIDES
ATOMIC FORCE MICROSCOPY
CHANNELING
CHEMICAL VAPOR DEPOSITION
COMPARATIVE EVALUATIONS
EPITAXY
GALLIUM NITRIDES
IRRADIATION
LAYERS
MEV RANGE
PHYSICAL RADIATION EFFECTS
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SAPPHIRE
SILVER IONS
STRAINS
SUBSTRATES
X-RAY DIFFRACTION