Ion Beam Analysis of the Thermal Stability of Hydrogenated Diamond-Like Carbon Thin Films on Si Substrate

Journal Article · Tue Mar 10 00:00:00 EDT 2009 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3120040· OSTI ID:21289543

Nandasiri, M I; Moore, A; Garratt, E; Wickey, K J; AlFaify, S; Gao, X; Kayani, A ^[1]; Ingram, D ^[2]

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1. Western Michigan University-Kalamazoo, MI 49008 (United States)
2. Ohio University-Athens, OH 45701 (United States)

Unbalanced magnetron sputtering deposition of C-H films has been performed with various levels of negative substrate bias and with a fixed flow rate of hydrogen. Argon was used as a sputtering gas and formed the majority of the gas in the plasma. The effect of hydrogenation on the final concentration of trapped elements and their thermal stability with respect to hydrogen content is studied using ion beam analysis (IBA) techniques. The elemental concentrations of the films were measured in the films deposited on silicon substrates with a 2.5 MeV of H{sup +} beam, which is used to perform Rutherford Backscattering Spectrometry (RBS) and Non-Rutherford Backscattering spectrometry (NRBS) and with 16 MeV of O{sup 5+} beam, used to perform Elastic Recoil Detection Analysis (ERDA). Effect of bias on the thermal stability of trapped hydrogen in the films has been studied. As the films were heated in-situ in vacuum using a non-gassy button heater, hydrogen was found to be decreasing around 400 deg. C.

• OSTI ID: 21289543
• Journal Information: AIP Conference Proceedings, Vol. 1099, Issue 1; Conference: CAARI 2008: 12. international conference on application of accelerators in research and industry, Fort Worth, TX (United States), 10-15 Aug 2008; Other Information: DOI: 10.1063/1.3120040; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
ARGON
CARBON
DEPOSITION
HYDROGEN IONS 1 PLUS
HYDROGENATION
ION BEAMS
ION MICROPROBE ANALYSIS
MEV RANGE
MULTICHARGED IONS
MULTI-ELEMENT ANALYSIS
OXYGEN IONS
QUANTITATIVE CHEMICAL ANALYSIS
RECOILS
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SILICON
SPUTTERING
SUBSTRATES
THIN FILMS