Determination of the fractal dimension for the epitaxial n-GaAs surface in the local limit

Journal Article · Thu Jan 15 04:00:00 EST 2009 · Semiconductors

DOI:https://doi.org/10.1134/S1063782609010084· OSTI ID:21260447

Bozhkova, V G ^[1]; Ivonin, I V; Novikov, V A ^[2]

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1. Scientific-Research Institute of Semiconductor Devices (Russian Federation)
2. Tomsk State University (Russian Federation)

Atomic-force microscopy studies of epitaxial n-GaAs surfaces prepared to deposit barrier contacts showed that major relief for such surfaces is characterized by a roughness within 3-15 nm, although 'surges' up to 30-70 nm are observed. Using three independent methods for determining the spatial dimension of the surface, based on the fractal analysis for the surface (triangulation method), its section contours in the horizontal plane, and the vertical section (surface profile), it was shown that the active surface for epitaxial n-GaAs obeys all main features of behavior for fractal Brownian surfaces and, in the local approximation, can be characterized by the fractal dimension D{sub f} slightly differing for various measuring scales. The most accurate triangulation method showed that the fractal dimensions for the studied surface of epitaxial n-GaAs for measurement scales from 0.692 to 0.0186 {mu}m are in the range D{sub f} = 2.490-2.664. The real surface area S{sub real} for n-GaAs epitaxial layers was estimated using a graphical method in the approximation {delta} {sup {yields}} 0 {delta} is the measurement scale parameter). It was shown that the real surface area for epitaxial n-GaAs can significantly (ten times and more) exceed the area of the visible contact window.

• OSTI ID: 21260447
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 1 Vol. 43; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
APPROXIMATIONS
ATOMIC FORCE MICROSCOPY
EPITAXY
FRACTALS
GALLIUM ARSENIDES
LAYERS
SURFACE AREA
SURFACES