Fractal character of the distribution of surface potential irregularities in epitaxial n-GaAs (100)

Journal Article · Fri May 15 04:00:00 EDT 2009 · Semiconductors

DOI:https://doi.org/10.1134/S1063782609050017· OSTI ID:21260375

Bozhkov, V G ^[1]

---

1. Scientific Research Institute of Semiconductor Devices (Russian Federation)

The fractal geometric properties of the relief of the surface potential of a heavily doped n{sup +}-GaAs (100) wafer are studied by Kelvin's method of atomic force microscopy. The average fractal dimensionalities determined by the triangulation method (D{sub f}), the method of horizontal cross sections (D{sub c}), and the method of similarity (D{sub s}) are rather close to each other, which is indicative of a unified nature of the fractal relief of the surface potential. In general, the fractal dimensionalities determined in the study suggest that the relative arrangement of local irregularities of the potential profile of the heavily doped n{sup +}-GaAs (100) wafer subjected to chemical and dynamic polishing is similar to the pattern corresponding to the fractal curve known as Serpinsky's napkin. It is found that the fractal irregularities of the potential vary much more gradually than it happens in the twodimensional case: the variations are proportional to linear dimensions to the power 2/D{sub c} (1 < D{sub c} < 2) rather than to the square of linear dimensions of the regions under study.

• OSTI ID: 21260375
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 5 Vol. 43; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ATOMIC FORCE MICROSCOPY
CROSS SECTIONS
DISTRIBUTION
DOPED MATERIALS
EPITAXY
FRACTALS
GALLIUM ARSENIDES
SURFACE POTENTIAL