Atomic Oxygen Sensors Based on Nanograin ZnO Films Prepared by Pulse Laser Deposition

Journal Article · Mon Jan 05 04:00:00 EST 2009 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3076858· OSTI ID:21255382

Yunfei, Wang; Xuekang, Chen; Zhonghua, Li; Kuohai, Zheng; Lanxi, Wang; Zhanzu, Feng; Shengsheng, Yang ^[1]

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1. National Key Laboratory of Vacuum and Cryogenics Technology and Physics, Lanzhou Institute of Physics, Lanzhou 730000 (China)

High-quality nanograin ZnO thin films were deposited on c-plane sapphire (Al{sub 2}O{sub 3}) substrates by pulse laser deposition (PLD). Scanning electron microscopy (SEM) and x-ray diffraction (XRD) were used to characterize the samples. The structural and morphological properties of ZnO films under different deposition temperature have been investigated before and after atomic oxygen (AO) treatment. XRD has shown that the intensity of the (0 0 2) peak increases and its FWHM value decreases after AO treatment. The AO sensing characteristics of nano ZnO film also has been investigated in a ground-based atomic oxygen simulation facility. The results show that the electrical conductivity of nanograin ZnO films decreases with increasing AO fluence and that the conductivity of the films can be recovered by heating.

• OSTI ID: 21255382
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1087; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM OXIDES
ELECTRIC CONDUCTIVITY
ENERGY BEAM DEPOSITION
HEATING
LASER RADIATION
LASERS
OXYGEN
PULSED IRRADIATION
SAPPHIRE
SCANNING ELECTRON MICROSCOPY
SENSORS
SIMULATION
SUBSTRATES
THIN FILMS
X-RAY DIFFRACTION
ZINC OXIDES