Boron Profile Sharpening in Ultra-Shallow p{sup +}-n Junction Produced by Plasma Immersion Ion Implantation from BF{sub 3} Plasma

Journal Article · Mon Nov 03 00:00:00 EST 2008 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3033668· OSTI ID:21251709

Lukichev, V; Rudenko, K; Orlikovsky, A ^[1]; Pustovit, A; Vyatkin, A ^[2]

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1. Institute of Physics and Technology (FTIAN), Russian Academy of Sciences, Nakhimovsky prosp. 34, Moscow (Russian Federation)
2. Institute of Microelectronics Technology (IMT), Chernogolovka (Russian Federation)

We have investigated plasma immersion ion implantation (PI{sup 3}) of boron with energies of 500 eV (doses up to 2x10{sup 15} cm{sup -2}) from BF{sub 3} plasma with He pre-amorphizing implantation (PAI)(energy 3 keV, dose 5x10{sup 16} cm{sup -2}). Implanted samples were subjected to RTA (T = 900 to 1050 deg. C, t = 2 to 24 sec and spike anneal). SIMS analysis of boron profiles revealed its anomalous behavior. For short RTA times the profile tail (below 5x10{sup 19} cm{sup -3}) moves toward the surface and then, as in the usual diffusion, toward the bulk at longer annealing times.

• OSTI ID: 21251709
• Journal Information: AIP Conference Proceedings, Vol. 1066, Issue 1; Conference: 17. international conference on ion implantation technology, Monterey, CA (United States), 8-13 Jun 2008; Other Information: DOI: 10.1063/1.3033668; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
BORON
BORON FLUORIDES
EV RANGE 100-1000
ION IMPLANTATION
ION MICROPROBE ANALYSIS
KEV RANGE 01-10
MASS SPECTROSCOPY
PLASMA
PLASMA IMPURITIES
P-N JUNCTIONS