Angular Distributions of Sputtered Atoms from Semiconductor Targets at Grazing Ion Beam Incidence Angles

Journal Article · Mon Nov 03 00:00:00 EST 2008 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3033602· OSTI ID:21251661

Sekowski, M ^[1]; Burenkov, A; Martinez-Limia, A ^[2]; Hernandez-Mangas, J ^[3]; Ryssel, H ^[1]

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1. Lehrstuhl fuer Elektronische Bauelemente, Cauerstrasse 6, 91058 Erlangen (Germany)
2. Fraunhofer Institut fuer Integrierte Systeme und Bauelementetechnologie (IISB), Schottkystrasse 10, 91058 Erlangen (Germany)
3. Departamento Electricidad y Eletronica, Universidad de Valladolid, 47011 Valladolid (Spain)

Angular distributions of ion sputtered germanium and silicon atoms are investigated within this work. Experiments are performed for the case of grazing ion incidence angles, where the resulting angular distributions are asymmetrical with respect to the polar angle of the sputtered atoms. The performed experiments are compared to Monte-Carlo simulations from different programs. We show here an improved model for the angular distribution, which has an additional dependence of the ion incidence angle.

• OSTI ID: 21251661
• Journal Information: AIP Conference Proceedings, Vol. 1066, Issue 1; Conference: 17. international conference on ion implantation technology, Monterey, CA (United States), 8-13 Jun 2008; Other Information: DOI: 10.1063/1.3033602; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANGULAR DISTRIBUTION
ATOMS
COMPUTERIZED SIMULATION
GERMANATES
GERMANIUM
GLASS
INCIDENCE ANGLE
ION BEAMS
ION IMPLANTATION
MONTE CARLO METHOD
SEMICONDUCTOR MATERIALS
SILICON
SPUTTERING