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Rutherford backscattering and channeling studies of Al and Mg diffusion in iron oxide thin films

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.59180· OSTI ID:21207997
; ; ; ; ;  [1]
  1. Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, Washington 99352 (United States)

Thin films of {alpha}-Fe{sub 2}O{sub 3}(0001) (hematite) and {gamma}-Fe{sub 2}O{sub 3} (001) (maghemite) were epitaxially grown on Al{sub 2}O{sub 3}(0001) and MgO(001) substrates, respectively, using the new molecular beam epitaxy (MBE) system at the Environmental Molecular Sciences Laboratory (EMSL). We have investigated the crystalline quality of these films using Rutherford Backscattering (RBS) and channeling experiments. Minimum yields obtained from aligned and random spectra are 2.7{+-}0.3% for the {alpha}-Fe{sub 2}O{sub 3}(0001) film and 14.5{+-}0.6% for the {gamma}-Fe{sub 2}O{sub 3} (001) film. Al and Mg outdiffusion into the hematite and maghemite films were observed at higher temperatures. Indiffusion of Fe atoms from the film into the substrate was observed for the {gamma}-Fe{sub 2}O{sub 3}(001)/MgO(001) system. In contrast, no Fe indiffusion was observed for the sapphire substrate.

OSTI ID:
21207997
Journal Information:
AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 475; ISSN 0094-243X; ISSN APCPCS
Country of Publication:
United States
Language:
English