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Rutherford Backscattering and Channeling Studies of Al and Mg Diffusion in Iron Oxide Thin Films

Conference ·
OSTI ID:15001909
Thin films of alpha-Fe2O3(0001) (hermatite) and gamma-Fe2O3 (001) (maghemite) were epitaxially grown on Al2O3(0001) substrates, respectively, using the new molecular beam epitaxy (MBE) system at the Environmental Molecular Sciences Laboratory (EMSL). We have investigated the crystalline quality of these films using Rutherford Backscattering (RBS) and channeling experiments. Minimum yields obtained from aligned and random spectra are 2.7+-0.3% for the alpha-Fe2o3(0001) film and 14.5+-0.6% for the gamma-Fe2O3 (001) film. Al and Mg outdiffusion into the hematite and maghemite films were observed at higher temperatures. Indiffusion of Fe atoms from the film into the substrate was observed for the gamma-Fe2o3(001)/MgO(001) system. In contrast, no Fe indiffusion was observed for the sapphire substrate.
Research Organization:
Pacific Northwest National Lab., Richland, WA (US)
Sponsoring Organization:
US Department of Energy (US)
DOE Contract Number:
AC06-76RL01830
OSTI ID:
15001909
Report Number(s):
PNNL-SA-30456
Country of Publication:
United States
Language:
English