skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Ion beam induced charge collection (IBICC) from integrated circuit test structures using a 10 MeV carbon microbeam

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.59108· OSTI ID:21205542
; ; ;  [1];  [1]; ;  [2];  [3]
  1. Ion Beam Modification and Analysis Laboratory, Department of Physics, University of North Texas, Denton, Texas 76203 (United States)
  2. Ion Beam Materials Research Laboratory, Sandia National Laboratories, MS 1056, PO Box 5800, Albuquerque, New Mexico 87185 (United States)
  3. Silicon Technology Development, Texas Instruments Inc., PO Box 650311, MS 3704, Dallas, Texas 75265 (United States)

As feature sizes of Integrated Circuits (ICs) continue to shrink, the sensitivity of these devices, particularly SRAMs and DRAMs, to natural radiation is increasing. In this paper, the Ion Beam Induced Charge Collection (IBICC) technique is utilized to simulate neutron-induced Si recoil effects in ICs. The IBICC measurements, conducted at the Sandia National Laboratories, employed a 10 MeV carbon microbeam with 1{mu}m diameter spot to scan test structures on specifically designed ICs. With the aid of IC layout information, an analysis of the charge collection efficiency from different test areas is presented.

OSTI ID:
21205542
Journal Information:
AIP Conference Proceedings, Vol. 475, Issue 1; Conference: 15.International conference on the application of accelerators in research and industry, Denton, TX (United States), 4-7 Nov 1998; Other Information: DOI: 10.1063/1.59108; (c) 1999 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English