Planarization of amorphous carbon films on patterned substrates using gas cluster ion beams
- Incubation Center, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2280 (Japan)
- Department of Engineering Synthesis, School of Engineering, the University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)
- Department of Mechanical Engineering, Kansai University, 3-3-35 Yamate-cho, Suita, Osaka 564-8680 (Japan)
- Western Digital Media Operations, 1710 Automation Parkway, San Jose, CA 95131 (United States)
Surface planarization and modification of a patterned surface were demonstrated using gas cluster ion beam (GCIB). Grooves with 100-400 nm intervals were formed on amorphous carbon films using focused ion beams to study the special frequency dependence of the planarization. Also, line and space patterns were fabricated on Si substrates, and amorphous carbons were deposited as a model structure of discrete track media. Subsequently, surface planarization using Ar-GCIB was carried out. After GCIB irradiations, all of the grooves were completely removed, and a flat surface was realized. And it showed that GCIB irradiation planarized grooves without huge thickness loss. From the power spectrum density of an atomic force microscope, GCIB preferentially removed grooves with small intervals. It was found from energy dispersive x-ray spectroscopy that surface planarization without severe damage in the amorphous carbon and magnetic layers was carried out with GCIB.
- OSTI ID:
- 21190156
- Journal Information:
- Journal of Applied Physics, Vol. 105, Issue 7; Conference: 53. annual conference on magnetism and magnetic materials, Austin, TX (United States), 10-14 Nov 2008; Other Information: DOI: 10.1063/1.3073665; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
Cluster Size Dependence of Etching by Reactive Gas Cluster Ion Beams
Cross-sectional TEM Observations of Si Wafers Irradiated With Gas Cluster Ion Beams