Effect of Bi{sub 2}O{sub 3} seed layer on crystalline orientation and ferroelectric properties of Bi{sub 3.25}La{sub 0.75}Ti{sub 3}O{sub 12} thin films prepared by rf-magnetron sputtering method

Journal Article · Sun Mar 15 00:00:00 EDT 2009 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3055362· OSTI ID:21190071

Yunyi, Wu ^[1]; Duanming, Zhang ^[1]; Jun, Yu; Yunbo, Wang ^[2]

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1. School of Physics, Huazhong University of Science and Technology, Wuhan 430074 (China)
2. Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan 430074 (China)

Bi{sub 3.25}La{sub 0.75}Ti{sub 3}O{sub 12} (BLT) thin films with Bi{sub 2}O{sub 3} seed layers were prepared on Pt(111)/Ti/SiO{sub 2}/Si substrate by rf-magnetron sputtering method. The effect of annealing procedure, thickness, and position of Bi{sub 2}O{sub 3} seed layer on the structural and electrical properties of BLT thin film was investigated. When using a two-step annealing procedure, the x-ray diffraction pattern indicated that BLT thin film with a Bi{sub 2}O{sub 3} seed layer showed c-axis preference orientation. Compared with Pt/BLT/Bi{sub 2}O{sub 3}/Pt structure film, the Pt/Bi{sub 2}O{sub 3}/BLT/Bi{sub 2}O{sub 3}/Pt structure film showed higher oriented to c direction. The ferroelectric property of BLT thin film improved remarkably with the incorporation of Bi{sub 2}O{sub 3} seed layer. Under the applied voltage of 14 V, the remnant polarization and coercive voltage of the Bi{sub 2}O{sub 3}/BLT/Bi{sub 2}O{sub 3} capacitor with 18-nm-thick Bi{sub 2}O{sub 3} seed layer were 45.2 {mu}C/cm{sup 2} and 9.2 V, respectively. Moreover, the Pt/Bi{sub 2}O{sub 3}/BLT/Bi{sub 2}O{sub 3}/Pt film with 18-nm-thick Bi{sub 2}O{sub 3} seed layers exhibited good fatigue endurance even after 6x10{sup 9} switching cycles, which was attributed to the double-sided Bi{sub 2}O{sub 3} layer. They decreased the grain boundary density by enhancing the grain size of BLT film and enhanced the c-axis preferential orientation. Compared with BLT film deposited directly on Pt, double-sided Bi{sub 2}O{sub 3} layer would greatly enhance the leakage current resistance of the BLT film.

• OSTI ID: 21190071
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 6 Vol. 105; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
BISMUTH OXIDES
CAPACITORS
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
FERROELECTRIC MATERIALS
GRAIN BOUNDARIES
GRAIN ORIENTATION
GRAIN SIZE
LANTHANUM COMPOUNDS
LAYERS
LEAKAGE CURRENT
PLATINUM
SILICON
SILICON OXIDES
SPUTTERING
THIN FILMS
TITANATES
TITANIUM
X-RAY DIFFRACTION