Structural and ferroelectric properties of La modified Sr{sub 0.8}Bi{sub 2.2}Ta{sub 2}O{sub 9} thin films

Journal Article · Thu Sep 01 04:00:00 EDT 2005 · Materials Research Bulletin

OSTI ID:20891590

Haifeng, Shi ^[1]; Yinyin, Lin ^[1]; Guangda, Hu ^[1]; Tingao, Tang ^[1]

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1. Asic and System State Key Laboratory, Department of Microelectronics, Fudan University, Shanghai 200433 (China)

La modified SBT (Sr{sub 0.8}La{sub 0.1}Bi{sub 2.1}Ta{sub 2}O{sub 9}) thin films of different thickness were fabricated on Pt/Ti/SiO{sub 2}/Si substrates by the metalorganic decomposition technique. All the films were annealed layer-by-layer at 800 deg. C using a rapid thermal annealing furnace. X-ray diffraction analysis indicated that the relative intensity of the (2 0 0) diffraction peak [I(2 0 0)/I(1 1 5)] increased with the increase of the film thickness. Eventually, an a-axis preferentially oriented SLBT film was obtained. These results are discussed with respect to the anisotropy of the grain growth. The a-axis preferentially oriented SLBT film, whose relative intensity of the (2 0 0) peak [I(2 0 0)/I(1 1 5)] was 1.05, had a remanent polarization (2P {sub r}) value of 21 {mu}C/cm{sup 2} and a coercive field (2E {sub c}) value of 70 kV/cm under the electric field of 200 kV/cm.

• OSTI ID: 20891590
• Journal Information: Materials Research Bulletin, Journal Name: Materials Research Bulletin Journal Issue: 9 Vol. 40; ISSN MRBUAC; ISSN 0025-5408
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANISOTROPY
ANNEALING
CHEMICAL PREPARATION
DECOMPOSITION
ELECTRIC FIELDS
FERROELECTRIC MATERIALS
FURNACES
GRAIN GROWTH
LAYERS
POLARIZATION
SILICON OXIDES
SUBSTRATES
THICKNESS
THIN FILMS
X-RAY DIFFRACTION