Low temperature perovskite crystallization of highly tunable dielectric Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} thick films deposited by ion beam sputtering on platinized silicon substrates
Journal Article
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· Journal of Applied Physics
- CEA-LETI MINATEC, 17 Rue des Martyrs, 38054 Grenoble Cedex 9 (France)
- CEA-LITEN MINATEC, 17 Rue des Martyrs, 38054 Grenoble Cedex 9 (France)
Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} (BST) thick films with thickness up to 1 {mu}m were deposited on Pt-coated silicon substrates by ion beam sputtering, followed by an annealing treatment. It is demonstrated that pure well-crystallized perovskite phase could be obtained in thick BST films by a low temperature process (535 deg. C). The BST thick films show highly tunable dielectric properties with tunability (at 800 kV/cm) up to 51.0% and 66.2%, respectively, for the 0.5 and 1 {mu}m thick films. The relationship between strains and dielectric properties was systematically investigated in the thick films. The results suggest that a comparatively larger tensile thermal in-plane strain (0.15%) leads to the degradation in dielectric properties of the 0.5 {mu}m thick film; besides, strong defect-related inhomogeneous strains ({approx}0.3%) make the dielectric peaks smearing and broadening in the thick films, which, however, preferably results in high figure-of-merit factors over a wide operating temperature range. Moreover, the leakage current behavior in the BST thick films was found to be dominated by the space-charge-limited-current mechanism, irrespective of the film thickness.
- OSTI ID:
- 21190040
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 4 Vol. 105; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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