Dielectric properties of epitaxial Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} films on amorphous SiO{sub 2} on sapphire
- Embedded Systems and Physical Sciences Laboratory, Motorola Labs, Tempe, Arizona 85284 (United States)
The strain-relieved crystalline Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} (BST) film on SiO{sub 2}/Al{sub 2}O{sub 3} was achieved by combining a molecular-beam epitaxy of BST on Si/Al{sub 2}O{sub 3} and a post-growth anneal in oxygen at elevated temperatures. The oxidation anneal not only converted the thin Si interlayer into amorphous SiO{sub 2} and eliminated the dielectric loss from the Si, but also relieved local strain in the film. The resulting BST film showed promising dielectric properties with 66% tunability and 0.016 dielectric loss, respectively. Additionally, temperature-dependent permittivity of the BST film resembled that of the bulk BST ceramics.
- OSTI ID:
- 20702599
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 7 Vol. 87; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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