Tunable transport properties of n-type ZnO nanowires by Ti plasma immersion ion implantation
Journal Article
·
· Journal of Applied Physics
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371 (Singapore)
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore)
Single-crystalline, transparent conducting ZnO nanowires were obtained simply by Ti plasma immersion ion implantation (PIII). Electrical transport characterizations demonstrate that the n-type conduction of ZnO nanowire could be tuned by appropriate Ti-PIII. When the energy of PIII is increased, the resistivity of ZnO decreases from 4x10{sup 2} to 3.3x10{sup -3} {omega} cm, indicating a semiconductor-metal transition. The failure-current densities of the metallic ZnO could be up to 2.75x10{sup 7} A/cm{sup 2}. Therefore, this facile method may provide an inexpensive alternative to tin doped indium oxide as transparent conducting oxide materials.
- OSTI ID:
- 21182685
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 7 Vol. 104; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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