Effect of Pt addition on growth stress and thermal stress of NiSi films

Journal Article · Mon Sep 01 04:00:00 EDT 2008 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2973679· OSTI ID:21182599

Bockstael, C van; Keyser, K de; Deduytsche, D; Van Meirhaeghe, R L; Detavernier, C ^[1]; Jordan-Sweet, J L; Lavoie, C ^[2]

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1. Department of Solid State Physics, Ghent University, 9000 Gent (Belgium)
2. IBM T.J. Watson Research Center, Yorktown Heights, New York, 10598 (United States)

We have studied the effect of the addition of Pt on the growth stress and thermal stress of NiSi films. Platinum was added in the form of an interlayer (Ni/Pt/Si), capping layer (Pt/Ni/Si), and as an alloying element within the as-deposited Ni film (Ni-Pt/Si). The evolution of film stress during the solid-state reaction was monitored using in situ curvature measurements. The large transient compressive growth stress observed during the reaction of pure Ni with Si was significantly reduced for samples with a Pt interlayer or alloy. Based on in situ XRD measurements, this reduction in the compressive growth stress could be related to the disappearance of Ni rich phases from the phase sequence and an overall increase in the silicidation temperature during ramp anneals. Pt was also found to affect the buildup of thermal stress while cooling down the sample after Ni{sub 1-x}Pt{sub x}Si formation. The presence of Pt as a solute in the monosilicide causes a significant increase in the stress relaxation temperature, and therefore, in the total thermal stress as observed at room temperature. For a Pt interlayer, we observed a faster buildup of thermal stress, which could be related to a preferred epitaxial orientation of the monosilicide grains in this film as revealed by pole figure measurements.

• OSTI ID: 21182599
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 5 Vol. 104; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CRYSTAL GROWTH
DEPOSITION
EPITAXY
GRAIN GROWTH
NICKEL SILICIDES
PLATINUM
PLATINUM ALLOYS
PLATINUM COMPOUNDS
SPUTTERING
STRESS RELAXATION
TEMPERATURE RANGE 0273-0400 K
THERMAL STRESSES
THIN FILMS
X-RAY DIFFRACTION