High mobility holes in a strained Ge quantum well grown on a thin and relaxed Si{sub 0.4}Ge{sub 0.6}/LT-Si{sub 0.4}Ge{sub 0.6}/Si(001) virtual substrate

Journal Article · Mon Mar 02 00:00:00 EST 2009 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3090034· OSTI ID:21176013

Myronov, M; Leadley, D R ^[1]; Shiraki, Y ^[2]

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1. Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom)
2. Advanced Research Laboratories, Musashi Institute of Technology, 8-15-1 Todoroki, Setagaya-ku, Tokyo 158-0082 (Japan)

Epitaxial growth of a compressively strained Ge quantum well (QW) on an ultrathin, 345 nm thick, Si{sub 0.4}Ge{sub 0.6}/LT-Si{sub 0.4}Ge{sub 0.6}/Si(001) virtual substrate (VS) has been demonstrated. The VS, grown with a low temperature Si{sub 0.4}Ge{sub 0.6} seed layer on a Si(001) substrate, is found to be fully relaxed and the Ge QW is fully strained. The temperature dependence of Hall mobility and carrier density clearly indicates a two-dimensional hole gas in the Ge QW. At room temperature, which is more relevant for electronic devices applications, the samples show a very high Hall mobility of 1235 cm{sup 2} V{sup -1} s{sup -1} at a carrier density of 2.36x10{sup 12} cm{sup -2}.

• OSTI ID: 21176013
• Journal Information: Applied Physics Letters, Vol. 94, Issue 9; Other Information: DOI: 10.1063/1.3090034; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CARRIER DENSITY
CARRIER MOBILITY
CRYSTAL GROWTH
ELECTRON GAS
ELECTRONIC EQUIPMENT
GERMANIUM
HOLES
LAYERS
MOLECULAR BEAM EPITAXY
QUANTUM WELLS
SEMICONDUCTOR MATERIALS
SUBSTRATES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K
TWO-DIMENSIONAL CALCULATIONS