Remote surface optical phonon scattering in ferroelectric Ba0.6Sr0.4TiO3 gated graphene

Chen, Hanying; Li, Tianlin; Hao, Yifei; Rajapitamahuni, Anil; Xiao, Zhiyong; Schoeche, Stefan; Schubert, Mathias; Hong, Xia

doi:10.1063/5.0106939

Title: Remote surface optical phonon scattering in ferroelectric Ba_0.6Sr_0.4TiO₃ gated graphene

Journal Article · Mon Oct 17 00:00:00 EDT 2022 · Journal of Applied Physics

DOI:https://doi.org/10.1063/5.0106939· OSTI ID:1962668

Chen, Hanying ^[1];

^[1];

^[1]; Rajapitamahuni, Anil ^[1];

^[1]; Schoeche, Stefan ^[1];

^[1];

^[1]

Univ. of Nebraska, Lincoln, NE (United States)

We report the effect of remote surface optical (RSO) phonon scattering on carrier mobility in monolayer graphene gated by ferroelectric oxide. We fabricate monolayer graphene transistors back-gated by epitaxial (001) Ba_0.6Sr_0.4TiO₃ films, with field effect mobility up to 23 000 cm² V^–1 s^–1 achieved. Switching ferroelectric polarization induces nonvolatile modulation of resistance and quantum Hall effect in graphene at low temperatures. Ellipsometry spectroscopy studies reveal four pairs of optical phonon modes in Ba_0.6Sr_0.4TiO₃, from which we extract RSO phonon frequencies. The temperature dependence of resistivity in graphene can be well accounted for by considering the scattering from the intrinsic longitudinal acoustic phonon and the RSO phonon, with the latter dominated by the mode at 35.8 meV. Furthermore, our study reveals the room temperature mobility limit of ferroelectric-gated graphene transistors imposed by RSO phonon scattering.

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Research Organization:: Univ. of Nebraska, Lincoln, NE (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)

Grant/Contract Number:: SC0016153; DMR-1710461

OSTI ID:: 1962668

Alternate ID(s):: OSTI ID: 1893213

Journal Information:: Journal of Applied Physics, Vol. 132, Issue 15; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

References (44)

Epitaxial ferroelectric interfacial devices Vaz, C. A. F.; Shin, Y. J.; Bibes, M. Applied Physics Reviews, Vol. 8, Issue 4 https://doi.org/10.1063/5.0060218	journal	December 2021
Flexible graphene–PZT ferroelectric nonvolatile memory Lee, Wonho; Kahya, Orhan; Toh, Chee Tat Nanotechnology, Vol. 24, Issue 47 https://doi.org/10.1088/0957-4484/24/47/475202	journal	November 2013
Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric Kim, Seyoung; Nah, Junghyo; Jo, Insun Applied Physics Letters, Vol. 94, Issue 6 https://doi.org/10.1063/1.3077021	journal	February 2009
Integrating functional oxides with graphene Hong, X.; Zou, K.; DaSilva, A. M. Solid State Communications, Vol. 152, Issue 15 https://doi.org/10.1016/j.ssc.2012.04.050	journal	August 2012
Enhancement of Carrier Mobility in Semiconductor Nanostructures by Dielectric Engineering Jena, Debdeep; Konar, Aniruddha Physical Review Letters, Vol. 98, Issue 13 https://doi.org/10.1103/PhysRevLett.98.136805	journal	March 2007
Intrinsic and extrinsic performance limits of graphene devices on SiO₂ Chen, Jian-Hao; Jang, Chaun; Xiao, Shudong Nature Nanotechnology, Vol. 3, Issue 4, p. 206-209 https://doi.org/10.1038/nnano.2008.58	journal	March 2008
Substrate-limited electron dynamics in graphene Fratini, S.; Guinea, F. Physical Review B, Vol. 77, Issue 19 https://doi.org/10.1103/PhysRevB.77.195415	journal	May 2008
Lattice dynamics of orthorhombic NdGaO3 Mock, A.; Korlacki, R.; Knight, S. Physical Review B, Vol. 99, Issue 18 https://doi.org/10.1103/PhysRevB.99.184302	journal	May 2019
Examining Graphene Field Effect Sensors for Ferroelectric Thin Film Studies Rajapitamahuni, A.; Hoffman, J.; Ahn, C. H. Nano Letters, Vol. 13, Issue 9 https://doi.org/10.1021/nl402204t	journal	August 2013
Emerging ferroelectric transistors with nanoscale channel materials: the possibilities, the limitations Hong, Xia Journal of Physics: Condensed Matter, Vol. 28, Issue 10 https://doi.org/10.1088/0953-8984/28/10/103003	journal	February 2016
Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices Salahuddin, Sayeef; Datta, Supriyo Nano Letters, Vol. 8, Issue 2 https://doi.org/10.1021/nl071804g	journal	February 2008
Probing Charged Impurities in Suspended Graphene Using Raman Spectroscopy Ni, Zhen Hua; Yu, Ting; Luo, Zhi Qiang ACS Nano, Vol. 3, Issue 3, p. 569-574 https://doi.org/10.1021/nn900130g	journal	February 2009
Non-Ising and chiral ferroelectric domain walls revealed by nonlinear optical microscopy Cherifi-Hertel, Salia; Bulou, Hervé; Hertel, Riccardo Nature Communications, Vol. 8, Issue 1 https://doi.org/10.1038/ncomms15768	journal	June 2017
Giant Transport Anisotropy in ReS2 Revealed via Nanoscale Conducting-Path Control Li, Dawei; Sun, Shuo; Xiao, Zhiyong Physical Review Letters, Vol. 127, Issue 13 https://doi.org/10.1103/PhysRevLett.127.136803	journal	September 2021
Effect of high- $κ$ gate dielectrics on charge transport in graphene-based field effect transistors Konar, Aniruddha; Fang, Tian; Jena, Debdeep Physical Review B, Vol. 82, Issue 11 https://doi.org/10.1103/PhysRevB.82.115452	journal	September 2010
Assembly of Close‐Packed Ferroelectric Polymer Nanowires via Interface‐Epitaxy with ReS ₂ Li, Dawei; Sun, Shuo; Wang, Kun Advanced Materials, Vol. 33, Issue 27 https://doi.org/10.1002/adma.202100214	journal	June 2021
Ferroelectric materials for neuromorphic computing Oh, S.; Hwang, H.; Yoo, I. K. APL Materials, Vol. 7, Issue 9 https://doi.org/10.1063/1.5108562	journal	September 2019
Graphene radio frequency receiver integrated circuit Han, Shu-Jen; Garcia, Alberto Valdes; Oida, Satoshi Nature Communications, Vol. 5, Issue 1 https://doi.org/10.1038/ncomms4086	journal	January 2014
Tuning and Persistent Switching of Graphene Plasmons on a Ferroelectric Substrate Goldflam, Michael D.; Ni, Guang-Xin; Post, Kirk W. Nano Letters, Vol. 15, Issue 8 https://doi.org/10.1021/acs.nanolett.5b00125	journal	July 2015
Quantum scattering time and its implications on scattering sources in graphene Hong, X.; Zou, K.; Zhu, J. Physical Review B, Vol. 80, Issue 24 https://doi.org/10.1103/PhysRevB.80.241415	journal	December 2009
Electronic transport in two-dimensional graphene Das Sarma, S.; Adam, Shaffique; Hwang, E. H. Reviews of Modern Physics, Vol. 83, Issue 2, p. 407-470 https://doi.org/10.1103/RevModPhys.83.407	journal	May 2011
Tuning the Effective Fine Structure Constant in Graphene: Opposing Effects of Dielectric Screening on Short- and Long-Range Potential Scattering Jang, C.; Adam, S.; Chen, J. -H. Physical Review Letters, Vol. 101, Issue 14 https://doi.org/10.1103/PhysRevLett.101.146805	journal	October 2008
Mechanism for Current Saturation and Energy Dissipation in Graphene Transistors DaSilva, Ashley M.; Zou, Ke; Jain, J. K. Physical Review Letters, Vol. 104, Issue 23 https://doi.org/10.1103/PhysRevLett.104.236601	journal	June 2010
Deposition of High-Quality ${HfO}_{2}$ on Graphene and the Effect of Remote Oxide Phonon Scattering Zou, K.; Hong, X.; Keefer, D. Physical Review Letters, Vol. 105, Issue 12 https://doi.org/10.1103/PhysRevLett.105.126601	journal	September 2010
Ferroelectric negative capacitance Íñiguez, Jorge; Zubko, Pavlo; Luk’yanchuk, Igor Nature Reviews Materials, Vol. 4, Issue 4 https://doi.org/10.1038/s41578-019-0089-0	journal	March 2019
High-Mobility Few-Layer Graphene Field Effect Transistors Fabricated on Epitaxial Ferroelectric Gate Oxides Hong, X.; Posadas, A.; Zou, K. Physical Review Letters, Vol. 102, Issue 13 https://doi.org/10.1103/PhysRevLett.102.136808	journal	April 2009
Optical properties of bulk and thin-film SrTiO[sub 3] on Si and Pt Zollner, Stefan; Demkov, A. A.; Liu, R. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 18, Issue 4 https://doi.org/10.1116/1.1303741	journal	January 2000
Coexistence of ferroelectric and relaxor properties in epitaxial films of Ba1−xSrxTiO3 Tyunina, M.; Levoska, J. Physical Review B, Vol. 70, Issue 13 https://doi.org/10.1103/PhysRevB.70.132105	journal	October 2004
100-GHz Transistors from Wafer-Scale Epitaxial Graphene Lin, Y.-M.; Dimitrakopoulos, C.; Jenkins, K. A. Science, Vol. 327, Issue 5966, p. 662-662 https://doi.org/10.1126/science.1184289	journal	February 2010
Invited Article: An integrated mid-infrared, far-infrared, and terahertz optical Hall effect instrument Kühne, P.; Herzinger, C. M.; Schubert, M. Review of Scientific Instruments, Vol. 85, Issue 7 https://doi.org/10.1063/1.4889920	journal	July 2014
Gate-controlled nonvolatile graphene-ferroelectric memory Zheng, Yi; Ni, Guang-Xin; Toh, Chee-Tat Applied Physics Letters, Vol. 94, Issue 16 https://doi.org/10.1063/1.3119215	journal	April 2009
Graphene Transistors: Status, Prospects, and Problems Schwierz, Frank Proceedings of the IEEE, Vol. 101, Issue 7 https://doi.org/10.1109/JPROC.2013.2257633	journal	July 2013
Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-κ insulator: The role of remote phonon scattering Fischetti, Massimo V.; Neumayer, Deborah A.; Cartier, Eduard A. Journal of Applied Physics, Vol. 90, Issue 9 https://doi.org/10.1063/1.1405826	journal	November 2001
Inelastic scattering and current saturation in graphene Perebeinos, Vasili; Avouris, Phaedon Physical Review B, Vol. 81, Issue 19 https://doi.org/10.1103/PhysRevB.81.195442	journal	May 2010
Graphene photonics and optoelectronics Bonaccorso, F.; Sun, Z.; Hasan, T. Nature Photonics, Vol. 4, Issue 9 https://doi.org/10.1038/nphoton.2010.186	journal	August 2010
Acoustic phonon scattering limited carrier mobility in two-dimensional extrinsic graphene Hwang, E. H.; Das Sarma, S. Physical Review B, Vol. 77, Issue 11 https://doi.org/10.1103/PhysRevB.77.115449	journal	March 2008
Empowering 2D nanoelectronics via ferroelectricity Ryu, Hojoon; Xu, Kai; Li, Dawei Applied Physics Letters, Vol. 117, Issue 8 https://doi.org/10.1063/5.0019555	journal	August 2020
Electron Beam Supercollimation in Graphene Superlattices Park, Cheol-Hwan; Son, Young-Woo; Yang, Li Nano Letters, Vol. 8, Issue 9 https://doi.org/10.1021/nl801752r	journal	September 2008
Observation of electron–hole puddles in graphene using a scanning single-electron transistor Martin, J.; Akerman, N.; Ulbricht, G. Nature Physics, Vol. 4, Issue 2 https://doi.org/10.1038/nphys781	journal	November 2007
Spectroscopic Ellipsometry Fujiwara, Hiroyuki https://doi.org/10.1002/9780470060193	book	January 2007
Polarization-Dependent Electronic Transport in Graphene/Pb(Zr,Ti)O ₃ Ferroelectric Field-Effect Transistors Lipatov, Alexey; Fursina, Alexandra; Vo, Timothy H. Advanced Electronic Materials, Vol. 3, Issue 7 https://doi.org/10.1002/aelm.201700020	journal	May 2017
Theory of interfacial plasmon-phonon scattering in supported graphene Ong, Zhun-Yong; Fischetti, Massimo V. Physical Review B, Vol. 86, Issue 16 https://doi.org/10.1103/PhysRevB.86.165422	journal	October 2012
Polar coupling enabled nonlinear optical filtering at MoS2/ferroelectric heterointerfaces Li, Dawei; Huang, Xi; Xiao, Zhiyong Nature Communications, Vol. 11, Issue 1 https://doi.org/10.1038/s41467-020-15191-2	journal	March 2020
Optical phonon modes, static and high-frequency dielectric constants, and effective electron mass parameter in cubic In₂O₃ Stokey, Megan; Korlacki, Rafał; Knight, Sean Journal of Applied Physics, Vol. 129, Issue 22 https://doi.org/10.1063/5.0052848	journal	June 2021

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Title: Remote surface optical phonon scattering in ferroelectric Ba0.6Sr0.4TiO3 gated graphene

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Title: Remote surface optical phonon scattering in ferroelectric Ba_0.6Sr_0.4TiO₃ gated graphene