Enhanced growth of high quality single crystal diamond by microwave plasma assisted chemical vapor deposition at high gas pressures

Journal Article · Mon Jan 12 04:00:00 EST 2009 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3072352· OSTI ID:21175876

Qi, Liang; Chengyi, Chin; Lai, Joseph; Chihshiue, Yan; Yufei, Meng; Hokwang, Mao; Hemley, Russell J ^[1]

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1. Geophysical Laboratory, Carnegie Institution of Washington, 5251 Broad Branch Road NW, Washington, DC 20015 (United States)

Single crystals of diamond up to 18 mm in thickness have been grown by microwave plasma assisted chemical vapor deposition at gas pressures of up to 350 torr. Growth rates of up to 165 {mu}m/h at 300 torr at high power density have been achieved. The processes were evaluated by optical emission spectroscopy. The high-quality single-crystal diamond grown at optimized conditions was characterized by UV-visible absorption and photoluminescence spectroscopy. The measurements reveal a direct relationship between residual absorption and nitrogen content in the gas chemistry. Fabrication of high quality single-crystal diamond at higher growth rates should be possible with improved reactor design that allows still higher gas synthesis pressures.

• OSTI ID: 21175876
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 2 Vol. 94; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
DIAMONDS
EMISSION SPECTROSCOPY
FABRICATION
MICROWAVE RADIATION
MONOCRYSTALS
NITROGEN
PHOTOLUMINESCENCE
PLASMA
POWER DENSITY
PRESSURE DEPENDENCE
PRESSURE RANGE KILO PA
THICKNESS
ULTRAVIOLET SPECTRA
VISIBLE SPECTRA