Epitaxial growth of B-doped high quality diamond film on cBN surface by chemical vapor deposition
Conference
·
OSTI ID:230101
- Jilin Univ., Changchun (China); and others
B-doped high quality diamond epitaxial films have been obtained on high-pressure synthesized cBN crystals by dc glow discharge chemical vapor deposition (CVD). The deposition conditions and the orientation of cBN crystal are important to diamond oriented nucleation and epitaxial growth. The micro-Raman spectroscopy measurement indicates that the quality of the diamond film grown on cBN (100) surface is close to that of natural diamond. The scanning electron microscopy (SEM) observation shows that the epitaxial film has very smooth surface. The specific resistance of the B-doped epitaxial film is about 0.1 ohm{center_dot}cm.
- OSTI ID:
- 230101
- Report Number(s):
- CONF-950840--
- Country of Publication:
- United States
- Language:
- English
Similar Records
A photoemission electron microscope investigation of chemical vapor deposition diamond films and diamond nucleation
Diamond deposition on polycrystalline films of cubic boron nitride
Investigation of isolated chemical vapour deposited diamonds using STIM tomography
Thesis/Dissertation
·
Thu Dec 31 23:00:00 EST 1992
·
OSTI ID:50584
Diamond deposition on polycrystalline films of cubic boron nitride
Journal Article
·
Mon Sep 06 00:00:00 EDT 1993
· Applied Physics Letters; (United States)
·
OSTI ID:6238415
Investigation of isolated chemical vapour deposited diamonds using STIM tomography
Conference
·
Mon Jun 01 00:00:00 EDT 1992
·
OSTI ID:10163581