Raman-active Froehlich optical phonon mode in arsenic implanted ZnO

Journal Article · Mon Jan 05 00:00:00 EST 2009 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3067997· OSTI ID:21175853

Ye, J D; Ren, Fang-Fang; Sun, X W; Lo, G Q ^[1]; Tripathy, S ^[2]; Teo, K L ^[3]

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1. Institute of Microelectronics, A STAR Agency for Science, Technology and Research, 11 Science Park Road, Singapore Science Park II, Singapore 117685 (Singapore)
2. Institute of Materials Research and Engineering, A STAR Agency for Science, Technology and Research, 3 Research Link, Singapore 117602 (Singapore)
3. Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576, Singapore and Data Storage Institute, 5 Engineering Drive 1, Singapore 117608 (Singapore)

In this letter, using both off-resonant and resonant Raman spectroscopic techniques, the correlation of optical phonons and structural disorder in As{sup +} implanted ZnO single crystals has been investigated. An additional broad peak shoulder at 550 cm{sup -1} between the transverse optical and longitudinal optical (LO) phonons was clarified to be resonant Froehlich optical phonon mode in the framework of effective dielectric function. Under resonance condition, an asymmetric broadening and softening of the LO phonon along with a blueshifted luminescent peak revealed the decreasing phonon coherent length and nanocrystallization with increasing fluence, respectively, in good agreement with the observations of transmission electron microscopy and atomic force microscopy.

• OSTI ID: 21175853
• Journal Information: Applied Physics Letters, Vol. 94, Issue 1; Other Information: DOI: 10.1063/1.3067997; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ARSENIC
ATOMIC FORCE MICROSCOPY
COHERENCE LENGTH
CRYSTALLIZATION
DIELECTRIC MATERIALS
ENERGY GAP
ION IMPLANTATION
LINE BROADENING
MONOCRYSTALS
PHONONS
PHOTOLUMINESCENCE
PHYSICAL RADIATION EFFECTS
POROSITY
RAMAN SPECTRA
SEMICONDUCTOR MATERIALS
TRANSMISSION ELECTRON MICROSCOPY
VACANCIES
ZINC OXIDES