Realization of defect-free epitaxial core-shell GaAs/AlGaAs nanowire heterostructures
- Department of Materials and Engineering, Massachusetts Institute of Technology, Cambridge Massachusetts 02139 (United States)
- High Temperature Materials Laboratory, Oak Ridge National Laboratory, Oak Ridge Tennessee 37831 (United States)
We report the controlled growth of vertically aligned GaAs/AlGaAs core-shell nanowires. By optimizing the shell deposition temperature and catalyst density we maintain high temperature stability and achieve defect-free epitaxial AlGaAs shell deposition with high aluminum incorporation. Energy dispersive x-ray analysis determines the shell composition to be Al{sub 0.9}Ga{sub 0.1}As and measures the uniformity of the shell thickness. Lattice-resolved high-angle annular dark-field scanning transmission electron microscopy images confirm the core-shell interface to be defect-free, epitaxial, and atomically sharp. The ability to realize GaAs/AlGaAs core-shell nanowires with precise control over the morphology and composition is essential to the development of nanowire-based high mobility electronics.
- OSTI ID:
- 21175659
- Journal Information:
- Applied Physics Letters, Vol. 93, Issue 15; Other Information: DOI: 10.1063/1.3002299; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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