Reduction in threading dislocation densities in AlN epilayer by introducing a pulsed atomic-layer epitaxial buffer layer
- State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China)
- Electron Microscope Laboratory, Peking University, Beijing 100871 (China)
A method of reducing threading dislocation (TD) density in AlN epilayers grown on sapphire substrate is reported. By introducing an AlN buffer layer grown by a pulsed atomic-layer epitaxy method, TDs in epitaxial AlN films were greatly decreased. From transmission electron microscopic images, a clear subinterface was observed between the buffer layer and the subsequently continuous grown AlN epilayer. In the vicinity of the subinterface, the redirection, annihilation, and termination of TDs were observed. The increase in lateral growth rate accounted for TD redirection and annihilation in the AlN epilayer. Strain variation between the two regions resulted in the termination of TDs owing to the dislocation line energy minimization.
- OSTI ID:
- 21175607
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 12 Vol. 93; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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