Substrate effect on in-plane dielectric and microwave properties of Ba(Sn{sub 0.15}Ti{sub 0.85})O{sub 3} thin films
- Function Materials Research Laboratory, Tongji University, Siping Road 1239, Shanghai 200092 (China)
The microstructure and in-plane dielectric and microwave properties of Barium tin titanate Ba(Sn{sub 0.15}Ti{sub 0.85})O{sub 3} (BTS) thin films grown on (1 0 0) LaAlO{sub 3} and (1 0 0) MgO single-crystal substrates through sol-gel process were investigated. X-ray diffraction and field emission scanning electron microscopy were used to characterize crystal structure of phases and microstructure of the thin films, respectively. Microwave properties of the films were measured from 1 to 10 GHz by the interdigital capacitor configuration. The obvious differences in the dielectric and microwave properties are attributed to the stress in the films, which result from the lattice mismatch and difference in the thermal expansion coefficients between the film and substrates. This work clearly reveals the highly promising potential of BTS films for application in tunable microwave devices.
- OSTI ID:
- 21144098
- Journal Information:
- Materials Research Bulletin, Vol. 43, Issue 8-9; Other Information: DOI: 10.1016/j.materresbull.2007.08.006; PII: S0025-5408(07)00365-0; Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ALUMINATES
BARIUM COMPOUNDS
CAPACITORS
CRYSTAL DEFECTS
DIELECTRIC MATERIALS
DIELECTRIC PROPERTIES
GHZ RANGE 01-100
LANTHANUM COMPOUNDS
MAGNESIUM OXIDES
MICROSTRUCTURE
MICROWAVE RADIATION
MONOCRYSTALS
SCANNING ELECTRON MICROSCOPY
SOL-GEL PROCESS
STRESSES
THERMAL EXPANSION
THIN FILMS
TIN COMPOUNDS
TITANATES
X-RAY DIFFRACTION