Effect of annealing temperature on the surface morphology and electrical properties of aluminum doped zinc oxide thin films prepared by sol-gel spin-coating method

Journal Article · Tue May 20 04:00:00 EDT 2008 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.2940614· OSTI ID:21143296

Mamat, M H; Hashim, H; Rusop, M ^[1]

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1. Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia)

Aluminum doped zinc oxide thin films were prepared through sol gel and spin coating technique from zinc acetate dihydrate and aluminum nitrate nanohydrate in alcoholic solution. The electrical properties and surface morphology study are investigated for the thin films annealed at 350{approx}500 deg. C. Zinc oxide thin films deposited on glass and silicon substrates were characterized using electron microscopy (SEM) and current-voltage (I-V) measurement scanning for surface morphology and electrical properties study respectively. The SEM investigation shows that zinc oxide thin films are denser at higher annealing temperature. The result indicates electrical properties of aluminum doped zinc oxide thin films are improved with annealing temperatures. The resistivity of aluminum doped zinc oxide thin films are decreased with annealing temperature up to 500 deg. C.

• OSTI ID: 21143296
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1017; ISSN 0094-243X; ISSN APCPCS
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM
ANNEALING
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
MORPHOLOGY
NANOSTRUCTURES
SCANNING ELECTRON MICROSCOPY
SILICON
SOL-GEL PROCESS
SUBSTRATES
SURFACES
TEMPERATURE DEPENDENCE
THIN FILMS
ZINC OXIDES