TEM specimen preparation of semiconductor-PMMA-metal interfaces

Journal Article · Sat Nov 15 04:00:00 EST 2008 · Materials Characterization

DOI:https://doi.org/10.1016/j.matchar.2008.02.007· OSTI ID:21137482

Thangadurai, P; Lumelsky, Yulia; Silverstein, Michael S ^[1]

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1. Department of Materials Engineering, Technion, Israel Institute of Technology, Haifa, 32000 (Israel)

Transmission electron microscopy (TEM) cross-section specimens of PMMA in contact with gold and Si were prepared by focused ion beam (FIB) and compared with plan-view PMMA specimens prepared by a dip-coating technique. The specimens were characterized by TEM and electron energy loss spectroscopy (EELS). In the cross-section specimens, the thin films of PMMA were located in a Si-PMMA-Au multilayer. Different thicknesses of PMMA films were spin-coated on the Si substrates. The thickness of the TEM specimens prepared by FIB was estimated using EELS to be 0.65 of the plasmon mean-free-path. Along the PMMA-Au interface, Au particle diffusion into the PMMA was observed, and the size of the Au particles was in the range of 2-4 nm. Dip-coating of PMMA directly on Cu TEM grids resulted in thin specimens with a granular morphology, with a thickness of 0.58 of the plasmon mean-free-path. The dip-coated specimens were free from ion milling induced artifacts, and thus serve as control specimens for comparison with the cross-sectioned specimens prepared by FIB.

• OSTI ID: 21137482
• Journal Information: Materials Characterization, Journal Name: Materials Characterization Journal Issue: 11 Vol. 59; ISSN 1044-5803; ISSN MACHEX
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CROSS SECTIONS
DIP COATING
ENERGY-LOSS SPECTROSCOPY
GOLD
INTERFACES
ION BEAMS
LAYERS
MEAN FREE PATH
MORPHOLOGY
PMMA
SEMICONDUCTOR MATERIALS
THICKNESS
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY