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Homogeneous growth of antidot structures electrodeposited on Si by nanosphere lithography

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.2937083· OSTI ID:21137346
; ; ; ; ;  [1]; ;  [2]
  1. Laboratorio de Sistemas Nanoestruturados, Departamento de Fisica, Universidade Federal de Santa Catarina, Caixa Postal 476, Florianopolis, Santa Catarina 88040-900 (Brazil)
  2. Departamento de Fisica, Universidade Federal de Pernambuco, Recife, Pernambuco 50670-901 (Brazil)
The characteristics of cobalt antidot structures, electrodeposited on Si by nanosphere lithography, is investigated by analysis of current transients and optical and atomic force microscopy. Polystyrene colloidal masks of 1 ML (monolayer) or a maximum of 2, with sphere diameters ranging between 165 and 600 nm were fabricated by spin coating. For masks partially covered with bilayer regions, it is shown that the volume of deposited material in bilayer areas corresponds to only 5% of the cobalt deposited in the monolayer areas. This drastic reduction in the deposition rate affects the quality of the deposit. Therefore, the use of colloidal masks of homogeneous thickness is necessary to guarantee the electrodeposition of nanostructured films of controlled thickness. It will also be shown that the use of high quality colloidal masks yields a reproducible electrodeposition process, enabling the use of the current transient as a reliable tool for assessment of the deposition process.
OSTI ID:
21137346
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 11 Vol. 103; ISSN JAPIAU; ISSN 0021-8979
Country of Publication:
United States
Language:
English

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