Formation of (Ti,Al)N/Ti{sub 2}AlN multilayers after annealing of TiN/TiAl(N) multilayers deposited by ion beam sputtering
- Laboratoire de Metallurgie Physique, UMR 6630 du CNRS, Universite de Poitiers SP2MI, Bd Marie et Pierre Curie, Teleport 2, BP 30179, 86962 Futuroscope-Chasseneuil Cedex (France)
- Laboratoire de Mecanique et de Physique des Materiaux, UMR 6617 du CNRS, ENSMA, 1 Avenue Clement Ader, Teleport 2, BP 40109, 86961 Futuroscope Chasseneuil Cedex (France)
By using ion beam sputtering, TiN/TiAl(N) multilayers of various modulation wavelengths ({lambda}=8, 13, and 32 nm) were deposited onto silicon substrates at room temperature. After annealing at 600 deg. C in vacuum, one obtains for {lambda}=13 nm a (Ti,Al)N/Ti{sub 2}AlN multilayer as it is evidenced from x-ray diffraction, high resolution transmission electron microscopy, and energy filtered electron imaging experiments. X-ray photoelectron spectroscopy (XPS) experiments show that the as-deposited TiAl sublayers contain a noticeable amount of nitrogen atoms which mean concentration varies with the period {lambda}. They also evidenced the diffusion of aluminum into TiN sublayers after annealing. Deduced from these observations, we propose a model to explain why this solid-state phase transformation depends on the period {lambda} of the multilayer.
- OSTI ID:
- 21137158
- Journal Information:
- Journal of Applied Physics, Vol. 103, Issue 8; Other Information: DOI: 10.1063/1.2894589; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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