Nonpolar 4H-AlN grown on 4H-SiC (1100) with reduced stacking fault density realized by persistent layer-by-layer growth

Journal Article · Mon Aug 25 00:00:00 EDT 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2976559· OSTI ID:21124095

Horita, Masahiro; Kimoto, Tsunenobu; Suda, Jun ^[1]

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1. Department of Electronic Science and Engineering, Kyoto University, Katsura Campus, Nishikyo-ku, Kyoto City, Kyoto 615-8510 (Japan)

Nonpolar AlN layers were grown on 4H-SiC (1100) substrates by plasma-assisted molecular-beam epitaxy. By using SiC substrates with well-formed step-and-terrace structures, stable layer-by-layer growth of 4H-AlN (1100) can be realized. The layer-by-layer growth is confirmed by observations of anisotropic two-dimensional AlN islands on the grown surface as well as persistent reflection high-energy electron diffraction intensity oscillations. Cross-sectional transmission electron microscopy observations reveal that stacking fault generation during growth is suppressed and the stacking fault density is reduced to 1x10{sup 6} cm{sup -1}.

• OSTI ID: 21124095
• Journal Information: Applied Physics Letters, Vol. 93, Issue 8; Other Information: DOI: 10.1063/1.2976559; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM NITRIDES
ANISOTROPY
CRYSTAL GROWTH
DEPOSITION
ELECTRON DIFFRACTION
LAYERS
MAGNETIC ISLANDS
MOLECULAR BEAM EPITAXY
OSCILLATIONS
PLASMA
SEMICONDUCTOR MATERIALS
SILICON CARBIDES
STACKING FAULTS
SUBSTRATES
TRANSMISSION ELECTRON MICROSCOPY