High-quality nonpolar 4H-AlN grown on 4H-SiC (1120) substrate by molecular-beam epitaxy

Journal Article · Mon Sep 11 04:00:00 EDT 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2352713· OSTI ID:20883239

Horita, Masahiro; Suda, Jun; Kimoto, Tsunenobu ^[1]

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1. Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-katsura, Nishikyo, Kyoto 615-8510 (Japan)

Growth of very high-quality nonpolar (1120) a-plane face 4H-AlN on 4H-SiC (1120) substrate was investigated. Nonpolar 4H-AlN (1120) was isopolytypically grown on 4H-SiC (1120) substrate by molecular-beam epitaxy. A reduction of defects such as stacking faults and threading dislocations was achieved by keeping the growing surface flat. To this end, the SiC substrate was HCl gas etched and the V/III ratio was optimized for AlN growth. A full width at half maximum of symmetrical x-ray diffraction {omega} scan of the 4H-AlN layer was 40 arc sec. Transmission electron microscopy revealed the stacking fault density to be 2x10{sup 5} cm{sup -1}, and the partial and perfect threading dislocation densities to be 7x10{sup 7} and 1x10{sup 7} cm{sup -2}, respectively.

• OSTI ID: 20883239
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 11 Vol. 89; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM NITRIDES
CRYSTAL GROWTH
DISLOCATIONS
HYDROCHLORIC ACID
LAYERS
MOLECULAR BEAM EPITAXY
SEMICONDUCTOR MATERIALS
SILICON CARBIDES
STACKING FAULTS
SUBSTRATES
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION