High-quality nonpolar 4H-AlN grown on 4H-SiC (1120) substrate by molecular-beam epitaxy
- Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-katsura, Nishikyo, Kyoto 615-8510 (Japan)
Growth of very high-quality nonpolar (1120) a-plane face 4H-AlN on 4H-SiC (1120) substrate was investigated. Nonpolar 4H-AlN (1120) was isopolytypically grown on 4H-SiC (1120) substrate by molecular-beam epitaxy. A reduction of defects such as stacking faults and threading dislocations was achieved by keeping the growing surface flat. To this end, the SiC substrate was HCl gas etched and the V/III ratio was optimized for AlN growth. A full width at half maximum of symmetrical x-ray diffraction {omega} scan of the 4H-AlN layer was 40 arc sec. Transmission electron microscopy revealed the stacking fault density to be 2x10{sup 5} cm{sup -1}, and the partial and perfect threading dislocation densities to be 7x10{sup 7} and 1x10{sup 7} cm{sup -2}, respectively.
- OSTI ID:
- 20883239
- Journal Information:
- Applied Physics Letters, Vol. 89, Issue 11; Other Information: DOI: 10.1063/1.2352713; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Structural TEM study of nonpolar a-plane gallium nitride grown on(112_0) 4H-SiC by organometallic vapor phase epitaxy
In-situ NC-AFM measurements of high quality AlN(0001) layers grown at low growth rate on 4H-SiC(0001) and Si(111) substrates using ammonia molecular beam epitaxy