High-performance amorphous gallium indium zinc oxide thin-film transistors through N{sub 2}O plasma passivation
- Semiconductor Device Laboratory, Samsung Advanced Institute of Technology, Yongin-Si, Gyeonggi-Do 449-712 (Korea, Republic of)
- Analytical Engineering Center, Samsung Advanced Institute of Technology, Yongin-Si, Gyeonggi-Do 449-712 (Korea, Republic of)
- Department of Semiconductor Systems Engineering, Sungkyunkwan University, Suwon-Si, Gyeonggi-Do 440-746 (Korea, Republic of)
Amorphous-gallium-indium-zinc-oxide (a-GIZO) thin filmtransistors (TFTs) are fabricated without annealing, using processes and equipment for conventional a-Si:H TFTs. It has been very difficult to obtain sound TFT characteristics, because the a-GIZO active layer becomes conductive after dry etching the Mo source/drain electrode and depositing the a-SiO{sub 2} passivation layer. To prevent such damages, N{sub 2}O plasma is applied to the back surface of the a-GIZO channel layer before a-SiO{sub 2} deposition. N{sub 2}O plasma-treated a-GIZO TFTs exhibit excellent electrical properties: a field effect mobility of 37 cm{sup 2}/V s, a threshold voltage of 0.1 V, a subthreshold swing of 0.25 V/decade, and an I{sub on/off} ratio of 7.
- OSTI ID:
- 21124063
- Journal Information:
- Applied Physics Letters, Vol. 93, Issue 5; Other Information: DOI: 10.1063/1.2962985; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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