Low temperature plasma etching for Si{sub 3}N{sub 4} waveguide applications
Journal Article
·
· Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
- Department of Electronics, Carleton University, Ottawa, Ontario K1S 5B6 (Canada)
Highly selective and anisotropic low temperature electron cyclotron resonance plasma etching process for silicon nitride optical rib waveguide devices compatible with integrated circuit technology is presented. Etching at low temperatures (-30 deg. C) with SF{sub 6}/O{sub 2} chemistry in combination with a silicon dioxide hard mask achieved good anisotropy with the vertical sidewalls.
- OSTI ID:
- 21124022
- Journal Information:
- Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films Journal Issue: 2 Vol. 26; ISSN 0734-2101; ISSN JVTAD6
- Country of Publication:
- United States
- Language:
- English
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