Etching characteristics and mechanism of Ge{sub 2}Sb{sub 2}Te{sub 5} thin films in inductively coupled Cl{sub 2}/Ar plasma
- Department of Control and Instrumentation Engineering, Korea University, Jochiwon, Chungnam 339-700 (Korea, Republic of)
This work reports the investigations of both etch characteristics and mechanisms for the Ge{sub 2}Sb{sub 2}Te{sub 5} (GST) thin films in the Cl{sub 2}/Ar inductively coupled plasma. The GST etch rates and etch selectivities over SiO{sub 2} were measured as functions of the Cl{sub 2}/Ar mixing ratio (43%-86% Ar), gas pressure (4-10 mTorr), and source power (400-700 W). Langmuir probe diagnostics and zero-dimensional (global) plasma modeling provided the information on plasma parameters and behaviors of plasma active species. From the model-based analysis of surface kinetics, it was found that with variations of the Cl{sub 2}/Ar mixing ratio and gas pressure, the GST etch rate follows the changes of Cl atom density and flux but contradicts with those for positive ions. The GST etch mechanism in the Cl{sub 2}-containing plasmas represents a combination of spontaneous and ion-assisted chemical reactions with no limitation by ion-surface interaction kinetics such as physical sputtering of the main material or the ion-stimulated desorption of low volatile reaction products.
- OSTI ID:
- 21124018
- Journal Information:
- Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 26, Issue 2; Other Information: DOI: 10.1116/1.2831502; (c) 2008 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
- Country of Publication:
- United States
- Language:
- English
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