Etching characteristics and mechanism of indium tin oxide films in an inductively coupled HBr/Ar plasma
Journal Article
·
· Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films
- Department of Control and Instrumentation Engineering, Korea University, Chungnam 339-700 (Korea, Republic of)
The investigations of etch characteristics and mechanisms for indium tin oxide (In{sub 2}O{sub 3}){sub 0.9}:(SnO{sub 2}){sub 0.1} (ITO) thin films using HBr/Ar inductively coupled plasma were carried out. The ITO etch rate was measured in the range of 0%-100% Ar in the HBr/Ar mixture at fixed gas pressure (6 mTorr), input power (700 W), and bias power (200 W). Plasma parameters and composition were examined with a combination of plasma diagnostics by double Langmuir probe and global (zero-dimensional) plasma model. It was found that the ITO etch rate follows the behavior of Br atom flux but contradicts with that for H atoms and positive ions. This suggests that the ITO etch process is not limited by the ion-surface interaction kinetics and appears in the reaction-rate-limited etch regime with the Br atoms as the main chemically active species.
- OSTI ID:
- 22053596
- Journal Information:
- Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Journal Name: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films Journal Issue: 1 Vol. 28; ISSN 1553-1813
- Country of Publication:
- United States
- Language:
- English
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