Temperature dependence of ordered GeSi island growth on patterned Si (001) substrates

Journal Article · Mon Jul 28 00:00:00 EDT 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2965484· OSTI ID:21124011

ZhongZhenyang,; Peixuan, Chen; Zuimin, Jiang ^[1]; Bauer, Guenther ^[2]

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1. Department of Physics, Fudan University, Shanghai 200433 (China)
2. Institute for Semiconductor Physics, University Linz, A-4040 Linz (Austria)

Statistical information on GeSi islands grown on two-dimensionally pit-patterned Si substrates at different temperatures is presented. Three growth regimes on patterned substrates are identified: (i) kinetically limited growth at low growth temperatures, (ii) ordered island growth in an intermediate temperature range, and (iii) stochastic island growth within pits at high temperatures. A qualitative model based on growth kinetics is proposed to explain these phenomena. It can serve as a guidance to realize optimum growth conditions for ordered islands on patterned substrates.

• OSTI ID: 21124011
• Journal Information: Applied Physics Letters, Vol. 93, Issue 4; Other Information: DOI: 10.1063/1.2965484; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
CRYSTAL STRUCTURE
EPITAXY
GERMANIUM ALLOYS
MAGNETIC ISLANDS
MOLECULAR STRUCTURE
SEMICONDUCTOR MATERIALS
SILICON ALLOYS
SPECTROSCOPY
STOCHASTIC PROCESSES
SUBSTRATES
TEMPERATURE DEPENDENCE