Compositional evolution of SiGe islands on patterned Si (001) substrates

Journal Article · Mon Nov 15 00:00:00 EST 2010 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3514239· OSTI ID:21464570

Jianjun, Zhang ^[1]; Rastelli, Armando; Schmidt, Oliver G ^[2]; Bauer, Guenther ^[1]

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1. Institute of Semiconductor and Solid State Physics, University Linz, A-4040 Linz (Austria)
2. Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden (Germany)

The authors investigate, by atomic-force-microscopy-based nanotomography, the composition evolution of ordered SiGe islands grown on pit-patterned Si (001) substrates as their size and aspect ratio increase with increasing Ge deposition. Compared to islands grown on flat substrates, the ordered island arrays show improved size, shape, and compositional homogeneity. The three-dimensional composition profiles of individual pyramids, domes, and barns reveal that the Ge fraction at the base and in subsurface regions of the islands decreases with increasing amount of deposited Ge.

• OSTI ID: 21464570
• Journal Information: Applied Physics Letters, Vol. 97, Issue 20; Other Information: DOI: 10.1063/1.3514239; (c) 2010 American Institute of Physics; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
ATOMIC FORCE MICROSCOPY
CRYSTAL GROWTH
CRYSTAL STRUCTURE
DEPOSITION
EPITAXY
FABRICATION
GERMANIUM ALLOYS
GERMANIUM SILICIDES
LAYERS
MOLECULAR STRUCTURE
NANOSTRUCTURES
RESIDUAL STRESSES
SEMICONDUCTOR MATERIALS
SILICON
SILICON ALLOYS
SUBSTRATES
ALLOYS
CRYSTAL GROWTH METHODS
ELEMENTS
GERMANIUM COMPOUNDS
MATERIALS
MICROSCOPY
SEMIMETALS
SILICIDES
SILICON COMPOUNDS
STRESSES