Improved resonance characteristics of GaAs beam resonators by epitaxially induced strain

Journal Article · Mon Jun 23 00:00:00 EDT 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2952957· OSTI ID:21120863

Yamaguchi, H; Onomitsu, K ^[1]; Kato, K; Nakai, Y ^[1]; Warisawa, S; Ishihara, S ^[2]

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1. NTT Basic Research Laboratories, NTT Corporation, Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198 (Japan)
2. University of Tokyo, Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

Micromechanical-beam resonators were fabricated using a strained GaAs film grown on relaxed In{sub 0.1}Ga{sub 0.9}As/In{sub 0.1}Al{sub 0.9}As buffer layers. The natural frequency of the fundamental mode was increased 2.5-4 times by applying tensile strain, showing good agreement with the model calculation assuming strain of 0.35% along the beam. In addition, the Q factor of 19 000 was obtained for the best sample, which is one order of magnitude higher than that for the unstrained resonator. This technique can be widely applied for improving the performance of resonator-based micro-/nanoelectromechanical devices.

• OSTI ID: 21120863
• Journal Information: Applied Physics Letters, Vol. 92, Issue 25; Other Information: DOI: 10.1063/1.2952957; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
CRYSTAL GROWTH
GALLIUM ARSENIDES
INDIUM ARSENIDES
LAYERS
MOLECULAR BEAM EPITAXY
RESIDUAL STRESSES
RESONANCE
RESONATORS
SEMICONDUCTOR MATERIALS
THIN FILMS