Application of ion scattering spectroscopy to measurement of surface potential of MgO thin film under ion irradiation

Journal Article · Mon Feb 25 00:00:00 EST 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2888957· OSTI ID:21120567

Nagatomi, T; Kuwayama, T; Takai, Y ^[1]; Yoshino, K; Morita, Y; Kitagawa, M ^[2]; Nishitani, M ^[3]

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1. Department of Material and Life Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871 (Japan)
2. Panasonic AVC Networks Company, Matsushita Electric Industrial Co., Ltd., Ibaraki, Osaka 567-0026 (Japan)
3. Matsushita Electric Industrial Co., Ltd., Moriguchi, Osaka 570-8501 (Japan)

An experimental approach was proposed for the measurement of the surface potential (SP) induced on an insulator surface during ion irradiation by ion scattering spectroscopy (ISS). The resultant ISS spectra obtained for a MgO thin film of 600 nm thickness on a Si substrate under 950 eV He{sup +} irradiation revealed that the surface is positively charged by approximately 230 V. In addition, the onset energy of a secondary ion peak indicated a SP of approximately 205 V. The present results confirmed that ISS is an effective technique for measuring the SP during ion irradiation.

• OSTI ID: 21120567
• Journal Information: Applied Physics Letters, Vol. 92, Issue 8; Other Information: DOI: 10.1063/1.2888957; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
EV RANGE 100-1000
HELIUM IONS
ION BEAMS
IRRADIATION
MAGNESIUM OXIDES
SCATTERING
SILICON
SPECTRA
SPECTROSCOPY
SUBSTRATES
SURFACE POTENTIAL
THICKNESS
THIN FILMS