Stability of ion-implanted layers on MgO under ultrasonic cavitation

Journal Article · Sun Sep 01 04:00:00 EDT 1996 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.363195· OSTI ID:286546

Romana, L J; Rankin, J; Brewster, J R; Boatner, L A ^[1]; Williams, A M ^[2]

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1. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)
2. Metals and Ceramics Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)

The effects of ion implantation and ultrasonic cavitation on the near-surface region of MgO single crystals were investigated. For 150 keV, room-temperature implantations of Ar{sup +} or K{sup +} at 5{times}10{sup 16}{endash}10{sup 17} ionscm{sup {minus}2} into a (100)-oriented surface of MgO, a dilatometric swelling of the implanted layer is observed perpendicular to the implanted surface. When these strained surface layers are then subjected to an ultrasonic ({approximately}20 kHz) cavitation treatment, uniform layers ({approximately}100{endash}200 nm) can be removed from the MgO surface in a controlled manner. The thickness of the removed layer is directly related to the duration of the ultrasonic irradiation, but does not exceed the depth of the implanted species. When MgO implanted with Ar{sup +} or Kr{sup +} at fluences of 5{times}10{sup 16}{endash}10{sup 17} ionscm{sup {minus}2} is subsequently irradiated with 2 MeV He{sup +} ions at 10{sup 16}{endash}10{sup 17} ionscm{sup {minus}2}, the region exposed to the He{sup +} beam is effectively {open_quote}{open_quote}stabilized{close_quote}{close_quote} and is not removed by the ultrasonic treatment. K{sup +} or Ar{sup +} implantations at {lt}5{times}10{sup 16} ionscm{sup {minus}2} produced no swelling of the layer, and subsequent ultrasonic irradiation with an energy flux of {approximately}120 Wcm{sup {minus}2} did not remove the crystal surface as determined by profilometry. For MgO implanted with {approx_gt}2{times}10{sup 17} ionscm{sup {minus}2}, the implanted layer is highly strained and detaches from the underlying crystal without exposure to ultrasonic-cavitation effects. These findings are discussed in terms of the stressed states of the implanted layers, and their potential applications to the mechanical {open_quote}{open_quote}etching{close_quote}{close_quote} of ceramics are considered.

• OSTI ID: 286546
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 5 Vol. 80; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ARGON IONS
CAVITATION
CRYSTAL DEFECTS
HELIUM IONS
ION IMPLANTATION
LAYERS
MAGNESIUM OXIDES
MONOCRYSTALS
POTASSIUM IONS
STABILITY
STRAINS
SURFACE LAYERS
SURFACES
ULTRASONIC WAVES