Tunneling magnetoresistance of magnetic tunnel junctions using perpendicular magnetization L1{sub 0}-CoPt electrodes

Journal Article · Mon Apr 28 04:00:00 EDT 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2913163· OSTI ID:21102009

Kim, Gukcheon; Oogane, Mikihiko; Ando, Yasuo ^[1]; Sakuraba, Yuya ^[2]; Miyazaki, Terunobu ^[3]

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1. Department of Applied Physics, Graduate School of Engineering, Tohoku University, Aoba-yama 6-6-05, Sendai 980-8579 (Japan)
2. Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)
3. New Industry Creation Hatchery Center, Tohoku University, Aoba-yama 6-6-10, Sendai 980-8579 (Japan)

Magnetic tunnel junctions (MTJs) using L1{sub 0}-ordered CoPt electrodes with perpendicular magnetic anisotropy were fabricated. Full-epitaxial CoPt/MgO/CoPt-MTJs were prepared onto single crystal MgO-(001) substrate by sputtering method. X-ray diffraction analyses revealed that both bottom and top CoPt electrodes were epitaxially grown with (001)-orientation. The L1{sub 0}-chemical order parameter of 0.82 was obtained for the bottom CoPt electrode deposited at substrate temperature of 600 deg. C. The transport measurements with applying magnetic field perpendicular to the film plane showed a tunnel magnetoresistance ratio of 6% at room temperature and 13% at 10 K.

• OSTI ID: 21102009
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 17 Vol. 92; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANISOTROPY
COBALT ALLOYS
DEPOSITION
ELECTRODES
EPITAXY
MAGNESIUM OXIDES
MAGNETIC FIELDS
MAGNETIZATION
MAGNETORESISTANCE
MONOCRYSTALS
ORDER PARAMETERS
PLATINUM ALLOYS
SPUTTERING
SUBSTRATES
SUPERCONDUCTING JUNCTIONS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0000-0013 K
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 0400-1000 K
THIN FILMS
TUNNEL EFFECT
X-RAY DIFFRACTION