skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Tunneling magnetoresistance of magnetic tunnel junctions using perpendicular magnetization L1{sub 0}-CoPt electrodes

Abstract

Magnetic tunnel junctions (MTJs) using L1{sub 0}-ordered CoPt electrodes with perpendicular magnetic anisotropy were fabricated. Full-epitaxial CoPt/MgO/CoPt-MTJs were prepared onto single crystal MgO-(001) substrate by sputtering method. X-ray diffraction analyses revealed that both bottom and top CoPt electrodes were epitaxially grown with (001)-orientation. The L1{sub 0}-chemical order parameter of 0.82 was obtained for the bottom CoPt electrode deposited at substrate temperature of 600 deg. C. The transport measurements with applying magnetic field perpendicular to the film plane showed a tunnel magnetoresistance ratio of 6% at room temperature and 13% at 10 K.

Authors:
; ;  [1];  [2];  [3]
  1. Department of Applied Physics, Graduate School of Engineering, Tohoku University, Aoba-yama 6-6-05, Sendai 980-8579 (Japan)
  2. Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)
  3. New Industry Creation Hatchery Center, Tohoku University, Aoba-yama 6-6-10, Sendai 980-8579 (Japan)
Publication Date:
OSTI Identifier:
21102009
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 92; Journal Issue: 17; Other Information: DOI: 10.1063/1.2913163; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANISOTROPY; COBALT ALLOYS; DEPOSITION; ELECTRODES; EPITAXY; MAGNESIUM OXIDES; MAGNETIC FIELDS; MAGNETIZATION; MAGNETORESISTANCE; MONOCRYSTALS; ORDER PARAMETERS; PLATINUM ALLOYS; SPUTTERING; SUBSTRATES; SUPERCONDUCTING JUNCTIONS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0000-0013 K; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K; THIN FILMS; TUNNEL EFFECT; X-RAY DIFFRACTION

Citation Formats

Kim, Gukcheon, Oogane, Mikihiko, Ando, Yasuo, Sakuraba, Yuya, and Miyazaki, Terunobu. Tunneling magnetoresistance of magnetic tunnel junctions using perpendicular magnetization L1{sub 0}-CoPt electrodes. United States: N. p., 2008. Web. doi:10.1063/1.2913163.
Kim, Gukcheon, Oogane, Mikihiko, Ando, Yasuo, Sakuraba, Yuya, & Miyazaki, Terunobu. Tunneling magnetoresistance of magnetic tunnel junctions using perpendicular magnetization L1{sub 0}-CoPt electrodes. United States. doi:10.1063/1.2913163.
Kim, Gukcheon, Oogane, Mikihiko, Ando, Yasuo, Sakuraba, Yuya, and Miyazaki, Terunobu. Mon . "Tunneling magnetoresistance of magnetic tunnel junctions using perpendicular magnetization L1{sub 0}-CoPt electrodes". United States. doi:10.1063/1.2913163.
@article{osti_21102009,
title = {Tunneling magnetoresistance of magnetic tunnel junctions using perpendicular magnetization L1{sub 0}-CoPt electrodes},
author = {Kim, Gukcheon and Oogane, Mikihiko and Ando, Yasuo and Sakuraba, Yuya and Miyazaki, Terunobu},
abstractNote = {Magnetic tunnel junctions (MTJs) using L1{sub 0}-ordered CoPt electrodes with perpendicular magnetic anisotropy were fabricated. Full-epitaxial CoPt/MgO/CoPt-MTJs were prepared onto single crystal MgO-(001) substrate by sputtering method. X-ray diffraction analyses revealed that both bottom and top CoPt electrodes were epitaxially grown with (001)-orientation. The L1{sub 0}-chemical order parameter of 0.82 was obtained for the bottom CoPt electrode deposited at substrate temperature of 600 deg. C. The transport measurements with applying magnetic field perpendicular to the film plane showed a tunnel magnetoresistance ratio of 6% at room temperature and 13% at 10 K.},
doi = {10.1063/1.2913163},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 17,
volume = 92,
place = {United States},
year = {2008},
month = {4}
}