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Production of high-density capacitive plasma by the effects of multihollow cathode discharge and high-secondary-electron emission

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.2917795· OSTI ID:21102003
;  [1]
  1. Department of Electrical and Electronic Engineering, Saga University 1 Honjo-machi, Saga 840-8502 (Japan)

High-density capacitively coupled plasma with electron density of 10{sup 11} cm{sup -3} was produced with the effects of the multihollow cathode discharge and the high-secondary-electron emission from radio frequency (rf)-biased electrode using Ar gas. It was found that the optimum pressure was around 3-15 Pa. In the case of only multihollow cathode discharge, the plasma density increased from 1.2x10{sup 10} to 8x10{sup 10} cm{sup -3} with the increasing distance z from the cathode electrode for 5 mm<z<15 mm. Moreover, plasma density increased with increasing voltage of rf-biased electrode. The rate of deposited amorphous hydrocarbon thin films of about 200 nm/min was attained with the high-density rf plasma enhanced chemical vapor deposition using CH{sub 4} gas.

OSTI ID:
21102003
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 17 Vol. 92; ISSN APPLAB; ISSN 0003-6951
Country of Publication:
United States
Language:
English