Photoemission of polarized electrons from InAlGaAs/GaAs superlattices with minimum conduction band offsets

Journal Article · Wed Nov 15 04:00:00 EST 2006 · Semiconductors

DOI:https://doi.org/10.1134/S1063782606110133· OSTI ID:21088637

Mamaev, Yu A; Subashiev, A V; Yashin, Yu P; Vasil'ev, D A; Kuz'michev, V V ^[1]; Zhukov, A E; Semenova, E S; Vasil'ev, A P; Ustinov, V M ^[2]

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1. St. Petersburg State Technical University (Russian Federation)
2. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)

Photoemission of polarized electrons from heterostructures based on InAlGaAs/GaAs superlattices with minimum conduction-band offsets is investigated. The comparison of the excitation energy dependence of the photoemission polarization degree with the calculated spectra make it possible to determine the polarization losses at different stages of the photoemission. A maximum polarization of P = 91% and a quantum yield of 0.14% are close to the best results obtained for photocathodes on the basis of strained semiconductor superlattices.

• OSTI ID: 21088637
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 11 Vol. 40; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ELECTRONS
ENERGY DEPENDENCE
EXCITATION
GALLIUM ARSENIDES
PHOTOCATHODES
PHOTOEMISSION
POLARIZATION
SEMICONDUCTOR MATERIALS
SPECTRA
SUPERLATTICES