The effect of misorientation of the GaAs substrate on the properties of InAs quantum dots grown by low-temperature molecular beam epitaxy

Journal Article · Mon May 15 00:00:00 EDT 2006 · Semiconductors

DOI:https://doi.org/10.1134/S1063782606050137· OSTI ID:21088542

Cirlin, G E; Polyakov, N K; Samsonenko, Yu B ^[1]; Ustinov, V M ^[2]; Zakharov, N D; Werner, P; Talalaev, V G ^[3]; Novikov, B V ^[4]

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1. Russian Academy of Sciences, Institute for Analytical Instrumentation (Russian Federation)
2. Russian Academy of Science, St. Petersburg Physicotechnical Scientific and Educational Center (Russian Federation)
3. Max-Planck Institute of Microstructure Physics (Germany)
4. St. Petersburg State University, Fok Institute of Physics (Russian Federation)

The structural and optical properties of arrays of InAs quantum dots grown on GaAs substrates at relatively low temperatures (250 and 350 deg. C) and with various degrees of misorientation of the surface are studied. It is shown that low-temperature growth is accompanied by the formation of quantum dot clusters along the dislocation loops on the singular surface and along the steps caused by the surface vicinality on the misoriented surface. The formation of quantum dot clusters leads to the appearance of a new long-wavelength band in the exciton photoluminescence (PL) spectra. It is found that the degrees of polarization of the PL spectral band for clusters of various shapes are different.

• OSTI ID: 21088542
• Journal Information: Semiconductors, Vol. 40, Issue 5; Other Information: DOI: 10.1134/S1063782606050137; Copyright (c) 2006 Nauka/Interperiodica; Article Copyright (c) 2006 Pleiades Publishing, Inc; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DISLOCATIONS
GALLIUM ARSENIDES
INDIUM ARSENIDES
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
POLARIZATION
QUANTUM DOTS
SPECTRA
SURFACES
TEMPERATURE RANGE 0400-1000 K