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Modification of zinc sulfide phosphors by irradiation with gamma-ray photons and electrons

Journal Article · · Semiconductors
 [1]; ;  [2];  [1]
  1. Technical University, St. Petersburg State Technological Institute (Russian Federation)
  2. RADIANT Technological Center (Russian Federation)
The effect of {gamma}-ray photons and electron beams on electroluminescence of the ZnS:(Cu, Br) and ZnS:(Cu, Al, Br) phosphors is studied. Irradiation of both samples with {gamma}-ray photons and of the ZnS(Cu, Br) sample with electrons makes it possible to increase the emission intensity by 20-35% at the optimal radiation dose of 5-10 Mrad. In this case, the relative intensity of the green-emission band increases in the electroluminescence spectra of all samples, presumably due to dissociation of the Cu{sub I}-Cu{sub Zn} and Br{sub Zn}-V{sub Zn} donor-acceptor pairs. Thus, irradiation makes it possible to control the intensity and spectrum of phosphors' emission, which can be used for nonchemical lithography of luminescent layers.
OSTI ID:
21088484
Journal Information:
Semiconductors, Journal Name: Semiconductors Journal Issue: 9 Vol. 40; ISSN SMICES; ISSN 1063-7826
Country of Publication:
United States
Language:
English

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