Surface-barrier In/p-CuGa{sub 3}Te{sub 5} and In/p-CuGa{sub 5}Te{sub 8} structures: Fabrication and properties
- St. Petersburg State Technical University (Russian Federation)
- Belarussian State University of Informatics and Radioelectronics (Belarus)
Single crystals of the ternary CuGa{sub 3}Te{sub 5} and CuGa{sub 5}Te{sub 8} ternary compounds are grown and their properties are studied. The photosensitive In/p-CuGa{sub 3}Te{sub 5} and In/p-CuGa{sub 5}Te{sub 8} structures were formed on homogeneous crystals for the first time. Photoelectric properties of new structures were studied and the parameters of the structures and of new semiconductors were determined; it is concluded that these structures can be used in broadband photoconverters of nonpolarized radiation.
- OSTI ID:
- 21088482
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 9 Vol. 40; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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