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Special features of the Fourier spectra of magnetoresistance oscillations in a heavily doped heterostructure

Journal Article · · Semiconductors

The Fourier spectra of oscillations of magnetoresistance in the heavily doped Al{sub x}Ga{sub 1-x}As:Si/GaAs heterostructure, with filling of the two size-quantization subbands, the ground subband E{sub m} and the excited subband E{sub p}, are studied. In the concept of the probabilities of intrasubband and intersubband transitions involving the Landau levels, the origin of harmonics at the frequencies F{sub m} {+-} F{sub p} in the oscillations of magnetoresistance are interpreted. The ratio between the peak amplitudes A{sub m} and A{sub p} at the frequencies F{sub m} and F{sub p} of the harmonics is close to unity, with equal probabilities of the relations A{sub m}/A{sub p} > 1 and A{sub m}/A{sub p} < 1. At A{sub m}/A{sub p} > 1, the damping of the Landau quantization is controlled by the Coulomb potential, whereas at A{sub m}/A{sub p} < 1 it is controlled by relaxation of two-dimensional electrons due to the heterointerfacial roughness.

OSTI ID:
21088102
Journal Information:
Semiconductors, Journal Name: Semiconductors Journal Issue: 3 Vol. 41; ISSN SMICES; ISSN 1063-7826
Country of Publication:
United States
Language:
English

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