Resonance modulation of the intersubband electron-electron interaction in an AlSb({delta}-Te)/InAs/AsSb({delta}-Te) quantum well by magnetic field

Journal Article · Thu Mar 15 04:00:00 EDT 2007 · Semiconductors

DOI:https://doi.org/10.1134/S1063782607030165· OSTI ID:21088099

Sadof'ev, Yu G; Bird, J P; Johnson, S R; Zhang, Y -H ^[1]

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1. Arizona State University, Department of Electrical Engineering and Center of Solid State Electronic Research (United States)

The amplitude-frequency modulation of oscillations of the magnetoresistance of 2D electrons in an AlSb({delta}-Te)/InAs/AsSb({delta}-Te) quantum well is studied. In the dependence of the amplitude of the oscillations {delta}(1/B){sub T=const}, regions of negative Dingle temperature are observed. The anomalies in the dependence {delta}(1/B){sub T=const} are attributed to the fact that the quantizing magnetic field resonantly induces intersubband electron-electron interaction between the 2D electrons of the ground size-quantization subband and excited subband. The resonance fields B and the times corresponding to the collision-related broadening of the Landau levels are estimated. The concentration threshold of filling of the excited size-quantization subband is established at a level of n{sub s} {approx} 8 x 10{sup 11} cm{sup -2}.

• OSTI ID: 21088099
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 3 Vol. 41; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM COMPOUNDS
ANTIMONIDES
ELECTRON-ELECTRON COLLISIONS
ELECTRON-ELECTRON COUPLING
ELECTRON-ELECTRON INTERACTIONS
FREQUENCY MODULATION
INDIUM ARSENIDES
MAGNETIC FIELDS
MAGNETORESISTANCE
QUANTIZATION
QUANTUM WELLS
TELLURIDES