Characterization of In{sub x}Ga{sub 1-x}As/GaAs quantum-well heterostructures by C-V measurements: Band offsets, quantum-confinement levels, and wave functions

Journal Article · Thu Mar 15 00:00:00 EDT 2007 · Semiconductors

DOI:https://doi.org/10.1134/S1063782607030153· OSTI ID:21088100

Zubkov, V. I. ^[1]

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1. St. Petersburg State Electrotechnical University (LETI) (Russian Federation), E-mail: [e-mail]

The method of C-V profiling combined with self-consistent solution of Schroedinger's and Poisson's equations was used to determine with high precision the absolute values of the conduction-band offsets, energies of quantum-confinement levels, and charge-carrier concentrations in quantum-confinement subbands of In{sub x}Ga{sub 1-x}As/GaAs quantum-well heterostructures with In content corresponding to the pseudomorphic growth mode (0 < x < 0.3). A characterization technique based on capacitance measurements is developed, enabling one to determine the main electronic parameters of quantum-confinement heterostructures.

• OSTI ID: 21088100
• Journal Information: Semiconductors, Vol. 41, Issue 3; Other Information: DOI: 10.1134/S1063782607030153; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHARGE CARRIERS
GALLIUM ARSENIDES
INDIUM COMPOUNDS
POISSON EQUATION
QUANTUM WELLS
WAVE FUNCTIONS