# Characterization of In{sub x}Ga{sub 1-x}As/GaAs quantum-well heterostructures by C-V measurements: Band offsets, quantum-confinement levels, and wave functions

## Abstract

The method of C-V profiling combined with self-consistent solution of Schroedinger's and Poisson's equations was used to determine with high precision the absolute values of the conduction-band offsets, energies of quantum-confinement levels, and charge-carrier concentrations in quantum-confinement subbands of In{sub x}Ga{sub 1-x}As/GaAs quantum-well heterostructures with In content corresponding to the pseudomorphic growth mode (0 < x < 0.3). A characterization technique based on capacitance measurements is developed, enabling one to determine the main electronic parameters of quantum-confinement heterostructures.

- Authors:

- St. Petersburg State Electrotechnical University (LETI) (Russian Federation), E-mail: VIZubkov@mail.eltech.ru

- Publication Date:

- OSTI Identifier:
- 21088100

- Resource Type:
- Journal Article

- Resource Relation:
- Journal Name: Semiconductors; Journal Volume: 41; Journal Issue: 3; Other Information: DOI: 10.1134/S1063782607030153; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA)

- Country of Publication:
- United States

- Language:
- English

- Subject:
- 36 MATERIALS SCIENCE; CHARGE CARRIERS; GALLIUM ARSENIDES; INDIUM COMPOUNDS; POISSON EQUATION; QUANTUM WELLS; WAVE FUNCTIONS

### Citation Formats

```
Zubkov, V. I.
```*Characterization of In{sub x}Ga{sub 1-x}As/GaAs quantum-well heterostructures by C-V measurements: Band offsets, quantum-confinement levels, and wave functions*. United States: N. p., 2007.
Web. doi:10.1134/S1063782607030153.

```
Zubkov, V. I.
```*Characterization of In{sub x}Ga{sub 1-x}As/GaAs quantum-well heterostructures by C-V measurements: Band offsets, quantum-confinement levels, and wave functions*. United States. doi:10.1134/S1063782607030153.

```
Zubkov, V. I. Thu .
"Characterization of In{sub x}Ga{sub 1-x}As/GaAs quantum-well heterostructures by C-V measurements: Band offsets, quantum-confinement levels, and wave functions". United States.
doi:10.1134/S1063782607030153.
```

```
@article{osti_21088100,
```

title = {Characterization of In{sub x}Ga{sub 1-x}As/GaAs quantum-well heterostructures by C-V measurements: Band offsets, quantum-confinement levels, and wave functions},

author = {Zubkov, V. I.},

abstractNote = {The method of C-V profiling combined with self-consistent solution of Schroedinger's and Poisson's equations was used to determine with high precision the absolute values of the conduction-band offsets, energies of quantum-confinement levels, and charge-carrier concentrations in quantum-confinement subbands of In{sub x}Ga{sub 1-x}As/GaAs quantum-well heterostructures with In content corresponding to the pseudomorphic growth mode (0 < x < 0.3). A characterization technique based on capacitance measurements is developed, enabling one to determine the main electronic parameters of quantum-confinement heterostructures.},

doi = {10.1134/S1063782607030153},

journal = {Semiconductors},

number = 3,

volume = 41,

place = {United States},

year = {Thu Mar 15 00:00:00 EDT 2007},

month = {Thu Mar 15 00:00:00 EDT 2007}

}

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