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Title: Characterization of In{sub x}Ga{sub 1-x}As/GaAs quantum-well heterostructures by C-V measurements: Band offsets, quantum-confinement levels, and wave functions

Abstract

The method of C-V profiling combined with self-consistent solution of Schroedinger's and Poisson's equations was used to determine with high precision the absolute values of the conduction-band offsets, energies of quantum-confinement levels, and charge-carrier concentrations in quantum-confinement subbands of In{sub x}Ga{sub 1-x}As/GaAs quantum-well heterostructures with In content corresponding to the pseudomorphic growth mode (0 < x < 0.3). A characterization technique based on capacitance measurements is developed, enabling one to determine the main electronic parameters of quantum-confinement heterostructures.

Authors:
 [1]
  1. St. Petersburg State Electrotechnical University (LETI) (Russian Federation), E-mail: VIZubkov@mail.eltech.ru
Publication Date:
OSTI Identifier:
21088100
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 41; Journal Issue: 3; Other Information: DOI: 10.1134/S1063782607030153; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHARGE CARRIERS; GALLIUM ARSENIDES; INDIUM COMPOUNDS; POISSON EQUATION; QUANTUM WELLS; WAVE FUNCTIONS

Citation Formats

Zubkov, V. I. Characterization of In{sub x}Ga{sub 1-x}As/GaAs quantum-well heterostructures by C-V measurements: Band offsets, quantum-confinement levels, and wave functions. United States: N. p., 2007. Web. doi:10.1134/S1063782607030153.
Zubkov, V. I. Characterization of In{sub x}Ga{sub 1-x}As/GaAs quantum-well heterostructures by C-V measurements: Band offsets, quantum-confinement levels, and wave functions. United States. doi:10.1134/S1063782607030153.
Zubkov, V. I. Thu . "Characterization of In{sub x}Ga{sub 1-x}As/GaAs quantum-well heterostructures by C-V measurements: Band offsets, quantum-confinement levels, and wave functions". United States. doi:10.1134/S1063782607030153.
@article{osti_21088100,
title = {Characterization of In{sub x}Ga{sub 1-x}As/GaAs quantum-well heterostructures by C-V measurements: Band offsets, quantum-confinement levels, and wave functions},
author = {Zubkov, V. I.},
abstractNote = {The method of C-V profiling combined with self-consistent solution of Schroedinger's and Poisson's equations was used to determine with high precision the absolute values of the conduction-band offsets, energies of quantum-confinement levels, and charge-carrier concentrations in quantum-confinement subbands of In{sub x}Ga{sub 1-x}As/GaAs quantum-well heterostructures with In content corresponding to the pseudomorphic growth mode (0 < x < 0.3). A characterization technique based on capacitance measurements is developed, enabling one to determine the main electronic parameters of quantum-confinement heterostructures.},
doi = {10.1134/S1063782607030153},
journal = {Semiconductors},
number = 3,
volume = 41,
place = {United States},
year = {Thu Mar 15 00:00:00 EDT 2007},
month = {Thu Mar 15 00:00:00 EDT 2007}
}