Electrochemical pore formation mechanism in III-V crystals (Part II)
Chemical and electrical processes developing at the semiconductor-electrolyte interface under conditions of anodic polarization were analyzed. It was shown that dense chemisorption coatings are formed on the surface of III-V crystals at voltages of pore formation onset, and a degenerate inversion layer is formed on the semiconductor side. In this case, a drop of the largest part of the applied voltage in the adsorption layer creates the prerequisites for nucleophilic substitution reactions involving chemisorbed anions and coordination-saturated atoms under the crystal surface. The mechanisms of these reactions were considered as applied to sphalerite-structured crystals. The results of experimental studies of the structures and compositions of porous layers in III-V crystals formed in various electrolytes at various polarization voltages are explained on the basis of the obtained concepts.
- OSTI ID:
- 21088029
- Journal Information:
- Semiconductors, Vol. 41, Issue 7; Other Information: DOI: 10.1134/S1063782607070123; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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